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BUP23BF Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUP23BF Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUP23BF/CF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUP23BF 450V (Min)-BUP23CF ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUP23BF 750 VCES Collector- Emitter Voltage(VBE= 0) BUP23CF 850 V BUP23BF 400 VCEO Collector-Emitter Voltage BUP23CF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB B Base Current- Continuous 6 A IBM Base Current-Peak 9 A PC Collector Power Dissipation @ TC=25℃ 37 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.4 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc Website:www.iscsemi.cn |
Similar Part No. - BUP23BF |
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Similar Description - BUP23BF |
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