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BUT54 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUT54 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT54 DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCER Collector-Emitter Voltage RBE≤100Ω 800 V VCEO Collector-Emitter Voltage 430 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn |
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