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BUV26 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV26 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUV26 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH 90 V VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6 A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=1.2A 1.5 V VBEsat-1 Base-emitter saturation voltage IC=6A ;IB=0.6 A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=12A; IB=1.2A 2.0 V ICEX Collector cut-off current VCE =180V;VBE =-1.5V;Tj=125℃ 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA Switching times resistive load ton Turn-on time 0.4 0.6 ms ts Storage time 0.45 1.0 μs tf Fall time IC=12A;IB1=1.2A; IB2=2.4A VCC =50V 0.12 0.25 μs |
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