TND027SW

No.7437-1/5

Features

•

N-channel MOSFET built in

•

Overheat protection (Self recovery type)

•

Overcurrent protection (Self recovery type current limiting function)

•

Overvoltage protection

•

Incorporates two sets of circuit

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDS

60

V

Output Current

IO(DC)

1.5

A

Input Voltage

VIN

--0.3 to +10

V

Allowable Power Dissipation

PD

1.3

W

1.7

W

Operating Supply Voltage

VDS(opr)

40

V

Operating Temperature

Topr

--40 to +85

°C

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7005A-005

IN

GND(S)

OUT(D)

Overvoltage

protective circuit

Overcurrent

protective

circuit

Output current

control

Overheat

protective

circuit

ESD

protective

circuit

Gate

shutdown

circuit

Ordering number : EN7437C

O2611 TKIM/D2607IP TIIM TC-00001114/O2203 TSIM/51503 TSIM TA-100479

SANYO Semiconductors

DATA SHEET

TND027SW

ExPD(Excellent Power Device)

Lowside Power Switch Lamp-, Solenoid-,

and Motor-Driving Applications

http://semicon.sanyo.com/en/network

1 : GND1

2 : IN1

3 : GND2

4 : IN2

5 : OUT2

6 : OUT2

7 : OUT1

8 : OUT1

SANYO : SOP8

5.0

0.2

0.1

0.43

1.27

14

5

8

Product & Package Information

• Package

: SOP8

• JEITA, JEDEC

: SC-87, SOT-96

• Minimum Packing Quantity : 1,000 pcs./reel

Packing Type: TL

Marking

Block Diagram

TL

TND

LOT No.

027