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BUV47A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUV47A
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV47A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUV47A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV47A Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUV47A Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUV47A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;L=25mH
450
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA ;IC=0
7
30
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=1.0A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=8A; IB=2.5A
3.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1.0A
1.6
V
ICES
Collector cut-off current
VCE=1000V; VBE=0
TC=125℃
0.15
1.5
mA
ICER
Collector cut-off current
VCB=1000V;RBE=10Ω
TC=125℃
0.4
3.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
15
50
fT
Transition frquency
IC=0.5A ; VCE=10V;f=1MHz
8
MHz
COB
Output capacitance
IC=0 ; VCB=20V;f=0.1MHz
105
pF
Switching times resistive load
ton
Turn-on time
1.0
μs
ts
Storage time
3.0
μs
tf
Fall time
IC=5A; IB1=-IB2=1A
VCC=150V
0.8
μs



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