Document Number: 91198

www.vishay.com

S11-0447-Rev. B, 14-Mar-11

1

This datasheet is subject to change without notice.

Power MOSFET

IRFP048, SiHFP048

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Isolated Central Mounting Hole

• 175 °C Operating Temperature

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The

TO-247AC

package

is

preferred

for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because its isolated mounting hole. It also provides

greater creepage distances between pins to meet the

requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Current limited by the package (die current = 73 A).

PRODUCT SUMMARY

60

0.018

110

29

38

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247AC

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

IRFP048PbF

SiHFP048-E3

SnPb

IRFP048

SiHFP048

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

70

A

Continuous Drain Current

52

290

Linear Derating Factor

1.3

W/°C

200

mJ

Maximum Power Dissipation

190

W

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

for 10 s

300

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply