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BUX48C Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUX48C Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUX48C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0; 700 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0; 7 30 V VCEsat-1 Collector-emitter saturation voltage IC=6A;IB=1.5A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A;IB=4A 3 V VBEsat-1 Base-emitter saturation voltage IC=6A;IB=1.5A 1.5 V VBEsat-2 Base-emitter saturation voltage IC=10A;IB=4A 2 V ICES Collector cut-off current VCE=1200V;VBE=-0 TC=125℃ 0.5 3.0 mA ICEO Collector cut-off current VCE=700V;IB=0 1 mA IEBO Emitter cut-off current VEB=6V;IC=0 1 mA hFE DC current gain IC=1A ;VCE=5V 15 50 Switching times ton Turn-on time 0.5 1 μs ts Storage time 1.5 3 μs tf Fall time IC=6A;IB1=-IB2=1.5A; VCC=250V 0.2 0.7 μs |
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