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IRF634 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IRF634
Description  N-channel mosfet transistor
PDF  1 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF634 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IRF634 Datasheet HTML 1Page - Inchange Semiconductor Company Limited  
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MOSFET
INCHANGE
IRF634
N-channel mosfet transistor
Features
1 2 3
・With TO-220 package
・Simple drive requirements
・Fast switching
・VDSS=250V; RDS(ON)≤0.45Ω;ID=8.1A
・1.gate 2.drain 3.source
Absolute Maximum Ratings Tc=25℃
SYMBOL
PARAMETER
RATING
UNIT
VDSS
Drain-source voltage (VGS=0)
250
V
VGS
Gate-source voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
8.1
A
Ptot
Total Dissipation@TC=25℃
74
W
Tj
Max. Operating Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TO-220
Electrical Characteristics Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-source breakdown voltage
VGS=0; ID=0.25mA
250
V
VGS(TH)
Gate threshold voltage
VDS= VGS; ID=0.25mA
2
4
V
RDS(ON)
Drain-source on-stage resistance
VGS=10V; ID=5.1A
450
mΩ
IGSS
Gate source leakage current
VGS=±20V;VDS=0
±100
nA
IDSS
Zero gate voltage drain current
VDS=250V; VGS=0
25
uA
VSD
Diode forward voltage
IF=8.1A; VGS=0
2.0
V


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