MJ900 datasheet(1/2 Pages) ISC

Part #	MJ900

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

MJ900

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO=-60V(Min.)

·High DC Current Gain-

: hFE= 1000(Min.)@IC=-3A

·Low Collector Saturation Voltage-

: VCE (sat)=-2.0V(Max.)@ IC=-3A

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continunous

-8

A

IB

B

Base Current-Continunous

-0.1

A

PC

Collector Power Dissipation

@TC=25℃

90

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-55~+200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.94

℃/W

isc Website：www.iscsemi.cn

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