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MJ15015 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # MJ15015
Description  Silicon NPN Power Transistors
PDF  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ15015 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  MJ15015 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJ15015 Datasheet HTML 2Page - Inchange Semiconductor Company Limited MJ15015 Datasheet HTML 3Page - Inchange Semiconductor Company Limited MJ15015 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
MJ15015
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(SUS)CEO
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
120
V
VCEsat-1
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=3.3A
3.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=15A; IB=7.0A
5.0
V
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
1.8
V
ICEO
Collector cut-off current
VCE=60V; VBE(off)=0
0.1
mA
ICEV
Collector cut-off current
VCE=Rated Value; VBE(off)=1.5V
TC=150℃
1.0
6.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.2
mA
hFE-1
DC current gain
IC=4A ; VCE=2V
10
70
hFE-2
DC current gain
IC=4A ; VCE=4V
20
70
hFE-3
DC current gain
IC=10A ; VCE=4V
5
Is/b
Second breakdown collector current
With base forward biased
VCE=60Vdc,t=0.5 s,
Nonrepetitive
3.0
A
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
60
600
pF
fT
Transition frequency
IC=1A ; VCE=4V;f=1.0MHz
0.8
MHz



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