MJ15024 datasheet(1/4 Pages) ISC

Part #	MJ15024

Description	Silicon NPN Power Transistors

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ15022 MJ15024

DESCRIPTION

・With TO-3 package

・Complement to type MJ15023; MJ15025

・Excellent safe operating area

・High DC current gain

hFE = 15 (Min) @ IC = 8 Adc

APPLICATIONS

・Designed for high power audio, disk head

positioners and other linear applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

MJ15022

350

VCBO

Collector-base voltage

MJ15024

Open emitter

400

V

MJ15022

200

VCEO

Collector-emitter voltage

MJ15024

Open base

250

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

16

A

ICM

Collector current-peak

30

A

IB

Base current

5

A

PD

Total power dissipation

TC=25℃

250

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

0.70

℃/W

Fig.1 simplified outline (TO-3) and symbol

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MJ15024 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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