MJ16010 datasheet(1/3 Pages) ISC

Part #	MJ16010

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJ16010

DESCRIPTION

・With TO-3 package

・High voltage ,high speed

APPLICATIONS

・Switching Regulators

・Inverters

・Solenoids

・Relay Drivers

・Motor Controls

・Deflection Circuits

PINNING (see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

850

V

VCEO

Collector-emitter voltage

Open base

450

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current

15

A

ICM

Collector current-peak

20

A

IB

Base current

10

A

IBM

Base current-peak

15

A

PD

Total Power Dissipation

Derate above 25℃

TC=25℃

175

1.0

W

W/℃

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.0

℃/W

Fig.1 simplified outline (TO-3) and symbol

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MJ16010 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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