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MJE51T Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE51T Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE51T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 25mA; IB= 0 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 2A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 10V 2.0 V ICEO Collector Cutoff Current VCE= 150V; IB=0 1.0 mA ICES Collector Cutoff Current VCE= 350V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 0.3A ; VCE= 10V 30 hFE-2 DC Current Gain IC= 5A ; VCE= 10V 5 COB Output Capacitance IE= 0 ; VCB= 10V; ftest=0.1MHz 150 pF Switching times ton Turn-On Time 0.5 μs toff Turn-Off Time IC= 2.5A , IB1= -IB2= 0.5A VBE(off)= 5V; VCC= 125V 2.0 μs isc Website:www.iscsemi.cn 2 |
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