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BAS19 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BAS19 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 4 page ![]() Semiconductor Group 2 BAS 19 … BAS 21 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 Oscillograph: R = 50 Ω tr = 0.6 ns, Rj = 50 Ω tr = 0.35 ns C ≤ 1pF V Breakdown voltage1) I(BR) = 100 µA BAS 19 BAS 20 BAS 21 V(BR) 120 200 250 – – – – – – Forward voltage IF = 100 mA IF = 200 mA VF – – – – 1 1.25 nA µA Reverse current VR = VR max VR = VR max; Tj = 150 ˚C IR – – – – 100 100 pF Diode capacitance VR = 0 V, f = 1 MHz CD ––5 ns Reverse recovery time IF = 30 mA, IR = 30 mA, RL = 100 Ω measured at IR = 3 mA trr ––50 Unit Values Parameter Symbol min. typ. max. DC characteristics AC characteristics 1) Pulse test: tp ≤ 300 µs, D = 2 %. |
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