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MJE800 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # MJE800
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE800 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  MJE800 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJE800 Datasheet HTML 2Page - Inchange Semiconductor Company Limited MJE800 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
MJE800/801/802/803
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
MJE800/801
60
V(BR)CEO
Collector-emitter
breakdown voltage
MJE802/803
IC=50mA;IB=0
80
V
MJE800/802
IC=1.5A ;IB=30mA
2.5
VCEsat-1
Collector-emitter
saturation voltage
MJE801/803
IC=2A ;IB=40mA
2.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A ;IB=40mA
3.0
V
MJE800/802
IC=1.5A ; VCE=3V
VBE-1
Base-emitter
on voltage
MJE801/803
IC=2A ; VCE=3V
2.5
V
VBE-2
Base-emitter
on voltage
IC=4A ; VCE=3V
3.0
V
MJE800/801
VCE=60V; IB=0
ICEO
Collector
cut-off current
MJE802/803
VCE=80V; IB=0
100
μA
ICBO
Collector cut-off current
VCB=Rated BVCEO; IE=0
TC=100℃
100
500
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2
mA
MJE800/802
IC=1.5A ; VCE=3V
hFE-1
DC current gain
MJE801/803
IC=2A ; VCE=3V
750
hFE-2
DC current gain
IC=4A ; VCE=3V
100



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