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MJE13002 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # MJE13002
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE13002 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  MJE13002 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJE13002 Datasheet HTML 2Page - Inchange Semiconductor Company Limited MJE13002 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
MJE13002
CHARACTERISTICS
Tj=25℃ unles otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=10mA ;IB=0
300
V
VCEsat-1
Collector-emitter saturation voltage
IC=0.5A; IB=0.1A
0.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=1A; IB=0.25A
TC=100℃
1.0
1.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=1.5A;IB=0.5A
3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=0.5A; IB=0.1A
1.0
V
VBEsat-2
Base-emitter saturation voltage
IC=1A; IB=0.25A
TC=100℃
1.2
1.1
V
ICEV
Collector cut-off current
VCEV=Rated value; VBE (off) =1.5V
TC=100℃
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
8
40
hFE-2
DC current gain
IC=1A ; VCE=2V
5
25
fT
Transition frequency
IC=0.1A ; VCE=10V;f=1MHz
4
MHz
COB
Collector outoput capacitance
IE=0;f=0.1MHz ; VCB=10V
21
pF
Switching times resistive load
td
Delay time
0.05
0.1
μs
tr
Rise time
0.5
1.0
μs
ts
Storage time
2.0
4.0
μs
tf
Fall time
VCC=125V ,IC=1A
IB1=-IB2=0.2A
tp=25μs
duty cycle≤1%
0.4
0.7
μs



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