MJE13004 datasheet(1/3 Pages) ISC

Part #	MJE13004

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE13004

DESCRIPTION

・

・With TO-220C package

・High voltage ,high speed

APPLICATIONS

・Particularly suited for 115V and 220V

switchmode applications such as switching

regulators,inverters ,motor controls,solenoid/

relay drivers and deflection circuits

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

600

V

VCEO

Collector-emitter voltage

Open base

300

V

VEBO

Emitter-base voltage

Open collector

9

V

IC

Collector current (DC)

4

A

ICM

Collector current-Peak

8

A

IB

Base current

2

A

IBM

Base current-PeaK

4

A

Ta=25℃

2

PD

Total power dissipation

TC=25℃

75

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-C

Thermal resistance from junction to case

1.67

℃/W

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MJE13004 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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