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MJH16018 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJH16018 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJH16018 DESCRIPTION ·Collector-Emitter Voltage- : VCEO(SUS)= 800V(Min) ·Fast Turn-Off Time APPLICATIONS Designed for high-voltage, high-speed , power switching in inductive circuits where fall time is critical. They are particu- larly suited for line operated switchmode applications as: ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB B Base Current-Continuous 8 A IBM Base Current-Peak 12 A Collector Power Dissipation @TC=25℃ 150 PC Collector Power Dissipation @TC=100℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R(th)j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website:www.iscsemi.cn |
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