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MJW16206 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJW16206 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJW16206 DESCRIPTION ・ ・With TO-247 package ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・Designed for use in horizontal deflection circuits for high and every high resolution, monochrome and color CRT monitors PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 12 A ICM Collector current-peak 15 A IB Base current 5.0 A IBM Base current-peak 10 A PD Total power dissipation TC=25℃ TC=100℃ 150 39 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-C Thermal resistance junction to case 0.67 ℃/W Fig.1 simplified outline (TO-247) and symbol |
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