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Document Number: 94314

2

Revision: 14-Jan-11

VS-MBRD650CTPbF, VS-MBRD660CTPbF

Vishay Semiconductors

Schottky Rectifier, 2 x 3 A

Note

Note

(1)

thermal runaway condition for a diode on its own heatsink

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop per leg

See fig. 1

3 A

0.7

V

6 A

0.9

3 A

0.65

6 A

0.85

Maximum reverse leakage current per leg

See fig. 2

0.1

mA

15

Typical junction capacitance per leg

145

pF

Typical series inductance per leg

Measured lead to lead 5 mm from package body

5.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

- 40 to 150

°C

Maximum thermal resistance,

junction to case

per leg

DC operation

See fig. 4

6

°C/W

per device

3

Maximum thermal resistance,

junction to ambient

80

Approximate weight

0.3

g

0.01

oz.

Marking device

Case style D-PAK (similar to TO-252AA)

MBRD650CT

MBRD660CT

dP

tot

dT

J

-------------

1

R

thJA

--------------

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