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P124 Datasheet(PDF) 2 Page - Vishay Siliconix |
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P124 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93754 2 Revision: 04-Nov-09 P100 Series Vishay High Power Products Passivated Assembled Circuit Elements, 25 A ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum DC output current at case temperature IO Full bridge 25 A 85 °C Maximum peak, one-cycle non-repetitive on-state or forward current ITSM, IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 357 A t = 8.3 ms 375 t = 10 ms 100 % VRRM reapplied 300 t = 8.3 ms 315 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 637 A2s t = 8.3 ms 580 t = 10 ms 100 % VRRM reapplied 450 t = 8.3 ms 410 Maximum I2 √t for fusing I2 √t t = 0.1 ms to 10 ms, no voltage reapplied I2t for time tx = I2 √t · √tx 6365 A2 √s Maximum value of threshold voltage VT(TO) TJ = 125 °C 0.82 V Maximum level value of on-state slope resistance rt1 TJ = 125 °C, average power = VT(TO) x IT(AV) + rt + (IT(RMS))2 12 m Ω Maximum on-state voltage drop VTM ITM = π x IT(AV) TJ = 25 °C 1.35 V Maximum forward voltage drop VFM IFM = π x IF(AV) Maximum non-repetitive rate of rise of turned-on current dI/dt TJ = 125 °C from 0.67 VDRM ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 200 A/μs Maximum holding current IH TJ = 25 °C anode supply = 6 V, resistive load, gate open 130 mA Maximum latching current IL TJ = 25 °C anode supply = 6 V, resistive load 250 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C, exponential to 0.67 VDRM gate open 200 V/μs Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 125 °C, gate open circuit 10 mA Maximum peak reverse leakage current IRRM TJ = 25 °C 100 μA RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s 2500 V |
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