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S3D Datasheet(PDF) 1 Page - Vishay Siliconix |
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S3D Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() Document Number: 88713 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 18-Apr-11 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Glass Passivated Rectifier S3A thru S3M Vishay General Semiconductor New Product FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 50 V to 1000 V IFSM 100 A IR 10 µA VF 1.15 V TJ max. 150 °C DO-214AB (SMC) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL S3A S3B S3D S3G S3J S3K S3M UNIT Device marking code SA SB SD SG SJ SK SM Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 103 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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