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BAW101 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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BAW101 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 3 page ![]() BAW 101 Semiconductor Group 2 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 Oscillograph: R = 50 Ω tr = 0.6 ns, Rj = 50 Ω tr = 0.35 ns C ≤ 1pF Unit Values Parameter Symbol min. typ. max. DC characteristics V Breakdown voltage I(BR) = 100 µA V(BR) 300 – – nA µA Reverse current VR = 250 V VR = 250 V, TA = 150 ˚C IR – – – – 150 50 AC characteristics µs Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA trr –1– Forward voltage IF = 100 mA VF – – 1.3 pF Diode capacitance VR = 0, f = 1 MHz CD –6– |
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