BAW78C datasheet(2/3 Pages) SIEMENS

Part #	BAW78C

Description	Silicon Switching Diodes (Switching applications High breakdown voltage)

PDF	3 Pages

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 3 page

BAW 78 A

… BAW 78 D

Semiconductor Group

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Test circuit for reverse recovery time

Pulse generator:

tp = 5 µs, D = 0.05

Oscillograph:

R = 50

Ω

tr = 0.6 ns, Rj = 50

Ω

tr = 0.35 ns

≤ 1pF

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Breakdown voltage

I(BR) = 100

µA

BAW 78 A

BAW 78 B

BAW 78 C

BAW 78 D

V(BR)

100

200

400

–

µA

Reverse current

VR = VRmax

VR = VRmax, TA = 150 ˚C

–

AC characteristics

µs

Reverse recovery time

IF = 200 mA, IR = 200 mA,

RL = 100

Ω

measured at IR = 20 mA

trr

–1–

Forward voltage1)

IF = 1 A

IF = 2 A

–

1.6

Diode capacitance

VR = 0, f = 1 MHz

–10

–

Pulse test: tp

≤ 300 µs, D = 2 %.

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