SI7141DP datasheet(2/7 Pages) VISHAY

2 / 7 page

www.vishay.com

Document Number: 65596

S10-0042-Rev. A, 11-Jan-10

Vishay Siliconix

Si7141DP

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

VDS Temperature Coefficient

ΔVDS/TJ

ID = - 250 µA

- 16

mV/°C

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

5.7

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.0

- 2.3

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 5

On-State Drain Currenta

ID(on)

VDS ≥ - 10 V, VGS = - 10 V

- 40

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 25 A

0.0015

0.0019

VGS = - 4.5 V, ID = - 20 A

0.0024

0.0030

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 25 A

103

Dynamicb

Input Capacitance

Ciss

VDS = - 10 V, VGS = 0 V, f = 1 MHz

14 300

Output Capacitance

Coss

2300

Reverse Transfer Capacitance

Crss

2600

Total Gate Charge

VDS = - 10 V, VGS = - 10 V, ID = - 20 A

265

400

VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A

128

194

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

f = 1 MHz

0.4

1.7

3.4

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1 Ω

ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω

Rise Time

Turn-Off DelayTime

td(off)

130

220

Fall Time

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1 Ω

ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω

130

220

Rise Time

120

200

Turn-Off DelayTime

td(off)

100

180

Fall Time

100

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

TC = 25 °C

- 60

Pulse Diode Forward Current

ISM

- 100

Body Diode Voltage

VSD

IS = - 5 A, VGS = 0 V

- 0.71

- 1.1

Body Diode Reverse Recovery Time

trr

IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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