SI7232DN datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 68986

S09-1499-Rev. B, 10-Aug-09

www.vishay.com

Vishay Siliconix

Si7232DN

New Product

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS =5 V thru 2 V

VGS =1.5 V

VGS =1 V

VDS - Drain-to-Source Voltage (V)

0.010

0.015

0.020

0.025

0.030

0.035

0.040

1020

3040

VGS =10 V

VGS =1.8V

VGS =2.5 V

ID - Drain Current (A)

ID =10A

VDS =16 V

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.3

0.6

0.9

1.2

1.5

TC = 125 °C

TC = 25 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

200

400

600

800

1000

1200

1400

1600

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

100

125

150

ID =10A

VGS =1.8V, 2.5 V,4.5 V

TJ -Junction Temperature (°C)

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