SI7430DP datasheet(2/4 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model Si7430DP

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

On-State Drain Current

ID(on)

VDS = 10 V, VGS = 10 V

136

VGS = 10 V, ID = 5 A

0.036

Drain-Source On-State Resistance

rDS(on)

VGS = 8 V, ID = 5 A

0.037

0.0375

Ω

Forward Transconductance

gfs

VDS = 15 V, ID = 5 A

Forward Voltage

VSD

IS = 2.6 A

0.73

0.77

Dynamic

Input Capacitance

Ciss

1725

1735

Output Capacitance

Coss

165

160

Reverse Transfer Capacitance

Crss

VDS = 50 V, VGS = 0 V, f = 1 MHz

VDS = 75 V, VGS = 10 V, ID = 5 A

28.5

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 75 V, VGS = 8 V, ID = 5 A

6.5

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 74191

S-71183

Rev. A, 18-Jun-07

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