SI7802DN datasheet(2/4 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model Si7802DN

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.8

On-State Drain Current

ID(on)

VDS ≥ 5 V, VGS = 10 V

VGS = 10 V, ID = 1.95 A

0.362

0.360

Drain-Source On-State Resistance

rDS(on)

VGS = 6 V, ID = 1.9 A

0.369

0.370

Ω

Forward Transconductance

gfs

VDS = 15 V, ID = 1.95 A

Diode Forward Voltage

VSD

IS = 3.2 A, VGS = 0 V

0.74

0.80

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

2.8

Gate-Drain Charge

Qgd

VDS = 125 V, VGS = 10 V, ID = 1.95 A

4.4

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 73173

S-60146

Rev. B, 13-Feb-06

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