SI7945DP datasheet(2/4 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model Si7945DP

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

2.1

On-State Drain Current

ID(on)

VDS = −5 V, VGS = −10 V

287

VGS = −10 V, ID = − 10.9 A

0.016

Drain-Source On-State Resistance

rDS(on)

VGS = −4.5 V, ID = −8.8 A

0.024

0.025

Ω

Forward Transconductance

gfs

VDS = −15 V, ID = −10.9 A

Diode Forward Voltage

VSD

IS = −2.9 A, VGS = 0 V

−0.83

−0.80

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

7.3

Gate-Drain Charge

Qgd

VDS = −15 V, VGS = −10 V, ID = −10.9 A

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

103

130

Fall Time

VDD = −15 V, RL = 15 Ω

ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 72183

S-60261

Rev. B, 27-Feb-06

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