SI7980DP datasheet(9/18 Pages) VISHAY

Part #	SI7980DP

Description	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

9 / 18 page

Document Number: 68391

S-83039-Rev. C, 29-Dec-08

www.vishay.com

Vishay Siliconix

Si7980DP

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Reverse Current (Schottky)

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

J = 150 °C

VSD -Source-to-Drain Voltage (V)

J = 25 °C

100

125

150

TJ -Junction Temperature (°C)

10-3

10-5

10-6

10-4

10-2

10-1

VDS =15 V

VDS =10 V

VDS =20 V

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

246

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID =5A

0.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

10 ms

100 ms

10 s

Limited byRDS(on)*

BVDSS

Limited

1ms

SI7980DP Datasheet(PDF) 9 Page - Vishay Siliconix

SI7980DP Datasheet(HTML) 9 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Datasheet Download

Link URL