SIE876DF datasheet(2/10 Pages) VISHAY

2 / 10 page

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Document Number: 64823

S09-0862-Rev. A, 18-May-09

Vishay Siliconix

SiE876DF

New Product

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 68 °C/W.

c. Measured at source pin (on the side of the package).

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

≤ 10 s

RthJA

°C/W

Maximum Junction-to-Case (Drain Top)

Steady State

RthJC (Drain)

0.8

Maximum Junction-to-Case (Source)a, c

RthJC (Source)

2.2

2.7

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 9

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

2.5

4.4

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

µA

VDS = 60 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 20 A

0.0050

0.0061

Forward Transconductancea

gfs

VDS = 15 V, ID = 20 A

Dynamicb

Input Capacitance

Ciss

VDS = 30 V, VGS = 0 V, f = 1 MHz

3100

Output Capacitance

Coss

480

Reverse Transfer Capacitance

Crss

180

Total Gate Charge

VDS = 30 V, VGS = 10 V, ID = 19.8 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Gate Resistance

f = 1 MHz

1.1

2.2

Turn-On Delay Time

td(on)

VDD = 30 V, RL = 3 Ω

ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

Pulse Diode Forward Currenta

ISM

Body Diode Voltage

VSD

IS = 10 A

0.8

1.2

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

135

205

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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