SIR406DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 64982

S09-1095-Rev. A, 15-Jun-09

www.vishay.com

Vishay Siliconix

SiR406DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.0025

0.0030

0.0035

0.0040

0.0045

0.0050

014

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

Qg - Total Gate Charge (nC)

ID =10A

VDS =16 V

VDS =5 V

VDS =10 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

234

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

560

1120

1680

2240

2800

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

ID =15A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

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