SIR496DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 68859

S10-2004-Rev. B, 06-Sep-10

www.vishay.com

Vishay Siliconix

SiR496DP

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VGS =10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.0030

0.0036

0.0042

0.0048

0.0054

0.0060

014

VGS =4.5 V

VGS =10 V

ID - Drain Current (A)

VDS =15 V

ID =10A

VDS =5 V

VDS =10 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

012

TC = 25 °C

TC = 125 °C

TC =- 55 °C

VGS - Gate-to-Source Voltage (V)

400

800

1200

1600

2000

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

VGS =4.5 V

VGS =10 V

ID =20A

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