SIR802DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 65671

S10-0217-Rev. A, 25-Jan-10

www.vishay.com

Vishay Siliconix

SiR802DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS =10 V thru 3 V

VGS =2 V

0.003

0.004

0.005

0.006

0.007

0.008

014

ID - Drain Current (A)

VGS =2.5 V

VGS =10 V

VGS =4.5 V

ID =10A

Qg - Total Gate Charge (nC)

VDS =15 V

VDS =10 V

VDS =5 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.6

1.2

1.8

2.4

3.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC =- 55 °C

Crss

500

1000

1500

2000

2500

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

VGS =2.5 V

ID =10A

VGS =10 V

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