CSD16301Q2 datasheet(2/9 Pages) TI

2 / 9 page

CSD16301Q2

SLPS235C –OCTOBER 2009–REVISED JULY 2011

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise specified

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

BVDSS

Drain to Source Voltage

VGS = 0V, ID = 250μA

IDSS

Drain to Source Leakage Current

VGS = 0V, VDS = 20V

IGSS

Gate to Source Leakage Current

VDS = 0V, VGS = +10/–8V

100

VGS(th)

Gate to Source Threshold Voltage

VDS = VGS, IDS = 250μA

0.9

1.1 1.55

VGS = 3V, IDS = 4A

mΩ

RDS(on)

Drain to Source On Resistance

VGS = 4.5V, IDS = 4A

mΩ

VGS = 8V, IDS = 4A

mΩ

gfs

Transconductance

VDS = 15V, IDS = 4A

16.5

Dynamic Characteristics

CISS

Input Capacitance

260

340

COSS

Output Capacitance

VGS = 0V, VDS = 12.5V, f = 1MHz

165

215

CRSS

Reverse Transfer Capacitance

Series Gate Resistance

1.3

2.6

Ω

Gate Charge Total (4.5V)

2.8

Qgd

Gate Charge – Gate to Drain

0.4

VDS = 10V, IDS = 4A

Qgs

Gate Charge Gate to Source

0.6

Qg(th)

Gate Charge at Vth

0.3

QOSS

Output Charge

VDS = 12.5V, VGS = 0V

td(on)

Turn On Delay Time

2.7

Rise Time

4.4

VDS = 12.5V, VGS = 4.5V, IDS = 4A

RG = 2Ω

td(off)

Turn Off Delay Time

4.1

Fall Time

1.7

Diode Characteristics

VSD

Diode Forward Voltage

IDS = 4A, VGS = 0V

0.8

Qrr

Reverse Recovery Charge

VDD = 12.5V, IF = 4A, di/dt = 200A/μs

5.1

trr

Reverse Recovery Time

VDD = 12.5V, IF = 4A, di/dt = 200A/μs

THERMAL INFORMATION

CSD16301Q2

THERMAL METRIC(1)(2)

UNITS

6 PINS

θJA

Junction-to-ambient thermal resistance (3)(4)

θJCtop

Junction-to-case (top) thermal resistance (3)

8.4

θJB

Junction-to-board thermal resistance

C/W

ψJT

Junction-to-top characterization parameter

ψJB

Junction-to-board characterization parameter

θJCbot

Junction-to-case (bottom) thermal resistance

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.

(3) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×

3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.

(4) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.

CSD16301Q2 Datasheet(PDF) 2 Page - Texas Instruments

CSD16301Q2 Datasheet(HTML) 2 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL