TCND5000 datasheet(3/14 Pages) VISHAY

3 / 14 page

Document Number: 83795

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Rev. 1.4, 14-Oct-10

TCND5000

Reflective Optical Sensor with PIN

Photodiode Output

Vishay Semiconductors

Note

(1) See figures 2 to 8 accordingly

(2) See figures 9 to 12 accordingly

Fig. 2 - Test Circuit

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Radiant Intensity vs. Forward Current

OUTPUT (DETECTOR) (2)

Forward voltage

IF = 50 mA

11.3

Breakdown voltage

IR = 100 μA

VBR

Reverse dark current

VR = 10 V, E = 0 lx

Iro

110

Diode capacitance

VR = 5 V, f = 1 MHz, E = 0 lx

1.8

Reverse light current

Ee = 1 mW/cm2,

λ = 950 nm, VR = 5 V

Ira

μA

Temperature coefficient of Ira

λ = 870 nm, VR = 5 V

TKira

0.2

%/K

Angle of half intensity

± 15

deg

Wavelength of peak sensitivity

λP

930

Range of spectral bandwidth

λ0.5

840 to 1050

SENSOR

Reverse Light Current

VR = 2.5 V, IF = 20 mA, D = 30 mm,

reflective mode: see figure 2

Ira

110

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Kodak grey card

20 % Reflectivity

30 mm

18223

VF - Forward Voltage (V)

13600

101

100

102

103

104

tP = 100 µs

tP/T = 0.001

16189

103

101

102

104

100

0.1

1000

100

F - Forward Current (mA)

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