TP0610K datasheet(2/4 Pages) VISHAY

2 / 4 page

Vishay Siliconix

SPICE Device Model TP0610K

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

2.8

On-State Drain Current

ID(on)

VDS = −10 V, VGS = −10 V

2.2

VGS = −10 V, ID = −500 mA

3.1

Drain-Source On-State Resistance

rDS(on)

VGS = −4.5 V, ID = −25 mA

4.4

5.5

Ω

Forward Transconductance

gfs

VDS = −10 V, ID = −500 mA

170

180

Diode Forward Voltage

VSD

IS = −200 mA, VGS = 0 V

−0.75

−0.90

Dynamic

Total Gate Charge

0.50

Gate-Source Charge

Qgs

0.12

Gate-Drain Charge

Qgd

VDS = −30 V, VGS = −10 V, ID = −500 mA

0.14

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

www.vishay.com

Document Number: 73270

S-52635

Rev. B, 02-Jan-06

TP0610K Datasheet(PDF) 2 Page - Vishay Siliconix

TP0610K Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

Datasheet Download

Link URL