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TSUS5201 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # TSUS5201
Description  Infrared Emitting Diode, 950 nm, GaAs
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSUS5201 Datasheet(HTML) 3 Page - Vishay Siliconix

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Document Number: 81055
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 2.2, 29-Jun-09
3
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
GaAs
Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 1.5 A, tp = 100 µs
TSUS5200
VF
2.2
3.4
V
TSUS5201
VF
2.2
3.4
V
TSUS5202
VF
2.2
2.7
V
Radiant intensity
IF = 100 mA, tp = 20 ms
TSUS5200
Ie
10
20
50
mW/sr
TSUS5201
Ie
15
25
50
mW/sr
TSUS5202
Ie
20
30
50
mW/sr
IF = 1.5 A, tp = 100 µs
TSUS5200
Ie
95
180
mW/sr
TSUS5201
Ie
120
230
mW/sr
TSUS5202
Ie
170
280
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
TSUS5200
φ
e
13
mW
TSUS5201
φ
e
14
mW
TSUS5202
φ
e
15
mW
t p - Pulse Duration (ms)
94 7989
100
101
101
10-1
10-1
100
102
10-2
tp/T = 0.01
IFSM = 2.5 A ( Single Pulse )
0.05
0.1
0.5
1.0
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
4
3
2
1
0
VF - Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
94 7990
T
amb - Ambient Temperature (°C)
100
80
60
40
20
0
I
F = 10 mA
IF - Forward Current (mA)
94 7991
103
101
102
104
100
1
10
100
1000
TSUS5200
TSUS 5202
TSUS 5201



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