BC640 datasheet(2/5 Pages) SIEMENS

Part #	BC640

Description	PNP Silicon AF Transistors (High current gain High collector current)

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 5 page

Semiconductor Group

BC 636

… BC 640

Maximum Ratings

Parameter

Values

Unit

Collector-emitter voltage

Peak collector current

Collector current

Junction temperature

˚C

Total power dissipation, TC = 90 ˚C1)

Storage temperature range

Collector-base voltage

Thermal Resistance

Junction - ambient1)

≤ 156

K/W

1.5

0.8 (1)

150

– 65 … + 150

Emitter-base voltage

Base current

100

Junction - case2)

≤ 55

100

BC 638

BC 636

BC 640

Peak base current

200

Symbol

VCE0

ICM

Ptot

Tstg

VCB0

Rth JA

VEB0

Rth JC

IBM

If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area

for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.

Mounted on Al heat sink 15 mm

× 25 mm × 0.5 mm.

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