New Product

VSIB420 thru VSIB480

Vishay General Semiconductor

Document Number: 89119

Revision: 14-Jul-09

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Instantaneous Forward Characteristics Per Diode

Figure 4. Typical Reverse Characteristics Per Diode

Instantaneous Forward Voltage (V)

100

0.01

0.3

1.3

1.1

0.1

1

10

0.9

0.7

0.5

T

T

T

Percent of Rated Peak Reverse Voltage (%)

1000

0.01

20

100

0.1

10

100

80

60

40

T

T

T

1

30

90

70

50

Figure 5. Typical Junction Capacitance Per Diode

Figure 6. Typical Transient Thermal Impedance Per Diode

Reverse Voltage (V)

1000

1

0.1

100

10

100

10

1

t - Heating Time (s)

100

0.1

0.01

100

1

10

10

1

0.1

Case Style GSIB-3S

0.996 (25.3)

0.972 (24.7)

0.157 (4.0) Ref.

0.146 (3.70)

0.130 (3.30)

0.602 (15.3)

0.579 (14.7)

0.709 (18.0)

0.669 (17.0)

0.303 (7.7)

0.287 (7.3)

0.057 (1.45)

0.041 (1.05)

0.083 (2.10)

0.067 (1.70)

0.043 (1.10)

0.035 (0.90)

0.075 (1.90)

0.059 (1.50)

0.150 (3.80)

0.134 (3.40)

0.031 (0.80)

0.024 (0.60)

0.114 (2.90)

0.098 (2.50)

0.189 (4.80)

0.173 (4.40)

0.382 (9.70)

0.366 (9.30)

Ø 0.134 (3.40)

Ø 0.122 (3.10)