BCP71M datasheet(2/4 Pages) SIEMENS

Part #	BCP71M

Description	NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current)

PDF	4 Pages

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 4 page

BCP 71M

Semiconductor Group

Au -12-1998

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Unit

Values

typ.

min.

max.

DC Characteristics

V(BR)CEO

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CBO

Collector-base breakdown voltage

IC = 100 µA, IB = 0

V(BR)EBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 8 V, IE = 0

ICBO

100

Collector cutoff current

VCB = 8 V, IE = 0 , TA = 150 °C

ICBO

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain 1)

IC = 10 mA, VCE = 5 V

IC = 500 mA, VCE = 1 V

IC = 2 A, VCE = 2 V

475

hFE

Collector-emitter saturation voltage1)

IC = 2 A, IB = 0.2 A

VCEsat

0.18

Base-emitter saturation voltage 1)

IC = 2 A, IB = 0.2 A

1.2

VBEsat

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

100

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

1) Pulse test: t < 300

µs; D < 2%

Semiconductor Group

1998-11-01

BCP71M Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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