Document Number: 89241

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Revision: 23-Mar-11

1

This datasheet is subject to change without notice.

Dual Trench MOS Barrier Schottky Rectifier

VT3080C, VIT3080C

Vishay General Semiconductor

New Product

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s, per

JESD 22-B106

• AEC-Q101 qualified

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reserve battery protection.

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

AEC-Q101 qualified

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 15 A

80 V

150 A

0.65 V

150 °C

TO-220AB

1

2

3

1

K

2

3

TO-262AA

PIN 1

PIN 2

PIN 3

K

PIN 1

PIN 2

CASE

PIN 3

TMBS

®

VT3080C

VIT3080C

PARAMETER

SYMBOL

VT3080C

VIT3080C

UNIT

Maximum repetitive peak reverse voltage

80

V

Maximum average forward rectified current

(fig. 1)

per device

30

A

per diode

15

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

150

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

- 55 to + 150

°C