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BU100 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU100 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU100 DESCRIPTION ·With TO-3 package ·High voltage capability APPLICATIONS ·For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PD Total power dissipation TC=75℃ 15 W Tj Junction temperature 200 ℃ Tstg Storage temperature -55~200 ℃ Fig.1 simplified outline (TO-3) and symbol |
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