IXFT18N100Q3 datasheet(1/5 Pages) IXYS

Part #	IXFT18N100Q3

Description	HiperFETTM Power MOSFETs Q3-Class

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

DS100390(10/11)

IXFT18N100Q3

IXFH18N100Q3

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C

18

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

60

A

I

A

T

C = 25°C18

A

E

AS

T

C = 25°C

1.5

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

50

V/ns

P

D

T

C = 25°C

830

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062in.) from Case for 10s

300

°C

T

sold

Plastic Body for 10 seconds

260

°C

M

d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

4.0

g

TO-247

6.0

g

V

DSS

= 1000V

I

D25

= 18A

R

DS(on) ≤

≤≤≤≤ 660m

Ω

Advance Technical Information

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 1mA

1000

V

GS(th)

V

DS = VGS, ID = 4mA

3.5

6.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

μA

T

J = 125°C

1.25 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

660 m

Ω

HiperFETTM

Power MOSFETs

Q3-Class

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-268 (IXFT)

S

G

D (Tab)

Features

Low Intrinsic Gate Resistance

International Standard Packages

Low Package Inductance

Fast Intrinsic Rectifier

Low R

DS(on) and QG

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

DC Choppers

Temperature and Lighting Controls

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