BCV49 datasheet(2/4 Pages) SIEMENS

2 / 4 page

Semiconductor Group

BCV 29

BCV 49

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

–

DC current gain1)

IC = 100

µA, VCE = 1 V

BCV 29

BCV 49

IC = 10 mA, VCE = 5 V

BCV 29

BCV 49

IC = 100 mA, VCE = 5 V

BCV 29

BCV 49

IC = 0.5 A, VCE = 5 V

BCV 29

BCV 49

hFE

4000

2000

10000

4000

20000

10000

4000

2000

–

Collector-emitter breakdown voltage

IC = 10 mA

BCV 29

BCV 49

V(BR)CE0

–

µA

Collector cutoff current

VCB = 30 V

BCV 29

VCB = 60 V

BCV 49

VCB = 30 V, TA = 150 ˚C

BCV 29

VCB = 60 V, TA = 150 ˚C

BCV 49

ICB0

–

100

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

BCV 29

BCV 49

V(BR)CB0

–

Emitter-base breakdown voltage, IE = 10

µA

V(BR)EB0

–

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

VCEsat

––1

Base-emitter saturation voltage1)

IC = 100 mA; IB = 0.1 mA

VBEsat

–

1.5

Emitter cutoff current, VEB = 4 V

IEB0

–

100

MHz

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

–

150

–

AC characteristics

Output capacitance

VCB = 10 V, f = 1 MHz

Cobo

–

3.5

–

Pulse test: t

≤ 300 µs, D = 2 %.

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