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BLF884PS Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BLF884PS
Description  UHF power LDMOS transistor
PDF  15 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF884PS Datasheet(HTML) 3 Page - NXP Semiconductors

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BLF884P_BLF884PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 16 December 2011
3 of 15
NXP Semiconductors
BLF884P; BLF884PS
UHF power LDMOS transistor
5.
Thermal characteristics
[1]
Rth(j-c) is measured under RF conditions.
6.
Characteristics
[1]
ID is the drain current.
[2]
Capacitance values without internal matching.
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase =80 C; PL(AV) =70W
[1]
0.22 K/W
Table 6.
DC characteristics
Tj =25 C; per section unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max Unit
V(BR)DSS drain-source breakdown voltage
VGS =0 V; ID = 1.2 mA
[1] 104 -
-
V
VGS(th)
gate-source threshold voltage
VDS =10 V; ID = 120 mA [1] 1.4
1.9
2.4
V
IDSS
drain leakage current
VGS =0 V; VDS =50V
-
-
1.4
A
IDSX
drain cut-off current
VGS =VGS(th) +3.75 V;
VDS =10V
-19
-
A
IGSS
gate leakage current
VGS =10 V; VDS = 0 V
-
-
140
nA
RDS(on)
drain-source on-state resistance
VGS =VGS(th) +3.75 V;
ID =4.25A
[1] -
240
-
m
Ciss
input capacitance
VGS = 0 V; VDS =50V;
f= 1MHz
[2] -
105
-
pF
Coss
output capacitance
VGS = 0 V; VDS =50V;
f= 1MHz
-34
-
pF
Crss
reverse transfer capacitance
VGS = 0 V; VDS =50V;
f= 1MHz
-0.7
-
pF
Table 7.
RF characteristics
RF characteristics in NXP production narrowband test circuit; Tcase =25 C unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
2-Tone, class-AB
VDS
drain-source voltage
-
50
-
V
IDq
quiescent drain current
[1] -0.65 -
A
PL(AV)
average output power
f1 = 860 MHz;
f2 =860.1 MHz
150
-
-
W
Gp
power gain
f1 = 860 MHz;
f2 =860.1 MHz
20
21
-
dB
D
drain efficiency
f1 = 860 MHz;
f2 =860.1 MHz
42
46
-
%
IMD3
third-order intermodulation distortion
f1 = 860 MHz;
f2 =860.1 MHz
-
32 28
dBc



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