BLF888

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Product data sheet

Rev. 5 — 21 January 2011

2 of 17

NXP Semiconductors

BLF888

UHF power LDMOS transistor

(RoHS)

1.3 Applications

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain1

2drain2

3

gate1

4

gate2

5

source

[1]

5

2

4

1

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number Package

Name Description

Version

BLF888

-

flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

104

V

gate-source voltage

0.5

+11

V

storage temperature

65

+150

C

junction temperature

-

200

C