BCX59IX datasheet(2/6 Pages) SIEMENS

2 / 6 page

Semiconductor Group

BCX 58

BCX 59

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Collector-emitter breakdown voltage

IC = 2 mA

BCX 58

BCX 59

V(BR)CE0

–

µA

Collector cutoff current

VCB = 32 V

BCX 58

VCB = 45 V

BCX 59

VCB = 32 V, TA = 150 ˚C

BCX 58

VCB = 45 V, TA = 150 ˚C

BCX 59

ICB0

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 10

µA

BCX 58

BCX 59

V(BR)CB0

–

Emitter-base breakdown voltage

IE = 1

µA

V(BR)EB0

7––

–

DC current gain

IC = 10

µA, VCE = 5 V

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

IC = 2 mA, VCE = 5 V

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

IC = 100 mA, VCE = 1 V1)

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

hFE

100

120

180

250

380

145

220

300

170

250

350

500

–

220

310

460

630

–

Emitter cutoff current

VEB = 4 V

IEB0

––20

µA

Collector cutoff current

VCE = 32 V, VBE = 0.2 V,TA = 100 ˚C

VCE = 45 V, VBE = 0.2 V,TA = 100 ˚C

ICEX

–

Pulse test: t

≤ 300 µs, D ≤ 2%.

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