BF840 datasheet(2/2 Pages) SIEMENS

Part #	BF840

Description	NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 2 page

Semiconductor Group

BF 840

BF 841

BF 840

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC Characteristics

AC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR) CE0

–

Collector-base cutoff current

VCB = 20 V, IE = 0

ICB0

–

100

–

DC current gain, IC = 1 mA, VCE = 10 V

BF 840

BF 841

hFE

–

220

125

Emitter-base breakdown voltage

IE = 10

µA, IB = 0

V(BR) EB0

4––

Base-emitter voltage

IC = 1 mA, VCE = 10 V

VBE

–

0.7

–

µS

Output conductance

IC = 1 mA, VCE = 10 V, f = 0.5 MHz

g22e

–4–

Noise figure

IC = 1 mA, VCE = 10 V, f = 100 kHz

RS = 200

Ω

–

1.7

–

MHz

Transition frequency

IC = 1 mA, VCE = 10 V, f = 100 MHz

–

380

–

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Ccb

–

0.3

–

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