BFG19 datasheet(1/6 Pages) SIEMENS

Part #	BFG19

Description	NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

PDF	6 Pages

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

1

Dec-13-1996

BFG 19S

NPN Silicon RF Transistor

• For low noise, low distortion broadband

amplifiers in antenna and

telecommunications systems up to 1.5GHz

at collector currents from 10 mA to 70 mA

• CECC-type available: CECC 50 002/259

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFG 19S

BFG19S Q62702-F1359

1 = E

2 = B

3 = E

4 = C

SOT-223

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

15

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

3

Collector current

IC

100

mA

Base current

IB

12

Total power dissipation

TS ≤ 75 °C

Ptot

1

W

Junction temperature

Tj

150

°C

Ambient temperature

TA

- 65 ... + 150

Storage temperature

Tstg

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

RthJS

≤ 75

K/W

1)

TS is measured on the collector lead at the soldering point to the pcb.

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BFG19 Datasheet(PDF) 1 Page - Siemens Semiconductor Group

BFG19 Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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